The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Mar. 02, 2011
Zhijiong Luo, Poughkeepsie, NY (US);
Haizhou Yin, Poughkeepsie, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Huicai Zhong, Beijing, CN;
Zhijiong Luo, Poughkeepsie, NY (US);
Haizhou Yin, Poughkeepsie, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Huicai Zhong, Beijing, CN;
Abstract
The present invention provides an isolation structure for a semiconductor substrate and a method for manufacturing the same, as well as a semiconductor device having the structure. The present invention relates to the field of semiconductor manufacture. The isolation structure comprises: a trench embedded in a semiconductor substrate; an oxide layer covering the bottom and sidewalls of the trench, and isolation material in the trench and on the oxide layer, wherein a portion of the oxide layer on an upper portion of the sidewalls of the trench comprises lanthanum-rich oxide. By the trench isolation structure according to the present invention, metal lanthanum in the lanthanum-rich oxide can diffuse into corners of the oxide layer of the gate stack, thus alleviating the impact of the narrow channel effect and making the threshold voltage adjustable.