The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Nov. 27, 2012
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Huilong Zhu, Poughkeepsie, NY (US);
Qingqing Liang, Lagrangeville, NY (US);
Haizhou Yin, Poughkeepsie, NY (US);
Zhijiong Luo, Poughkeepsie, NY (US);
Abstract
A quasi-nanowire transistor and a method of manufacturing the same are provided, the quasi-nanowire transistor comprising: providing an SOI substrate comprising a substrate layer (), a BOX layer () and an SOI layer (); forming a basic fin structure on the SOI layer, the basic fin structure comprising at least one silicon/silicon-germanium stack; forming source/drain regions () on both sides of the basic fin structure; forming a quasi-nanowire fin from a basic fin structure and an SOI layer thereunder; and forming a gate stack across the quasi-nanowire fin. The method can effectively control gate length characteristics. A semiconductor structure formed by the above method is also provided.