Katsunori Onishi

USPTO Granted Patents = 16 (Patent Applications = 4)

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 39(Granted Patents)

Location History:

Fukuoka, JP (2010)
Fishkill, NY (US) (2007 - 2016)
Somers, NY (US) (2015 - 2020)

Company Filing History:

9 out of 164,108

International Business Machines Corporation

Years Active: 2007-2020

where 'Filed Patents' based on already Granted Patents

16 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10741668 - Short channel and long channel devices (2020-08-11),

2. 10658363 - Cut inside replacement metal gate trench to mitigate N-P proximity effect (2020-05-19),

3. 10446550 - Cut inside replacement metal gate trench to mitigate N-P proximity effect (2019-10-15),

4. 10354928 - Integration scheme for gate height control and void free RMG fill (2019-07-16),

5. 10242982 - Method for forming a protection device having an inner contact spacer and the resulting devices (2019-03-26),

6. 10056303 - Integration scheme for gate height control and void free RMG fill (2018-08-21),

7. 9761679 - Performance optimized gate structures having memory device and logic device, the memory device with silicided source/drain regions that are raised with respect to silicided source/drain regions of the logic device (2017-09-12),

8. 9735058 - Method of forming performance optimized gate structures by silicidizing lowered source and drain regions (2017-08-15),

9. 9455195 - Method of forming performance optimized gate structures by silicidizing lowered source and drain regions (2016-09-27),

10. 9240482 - Asymmetric stressor DRAM (2016-01-19),

11. 9136321 - Low energy ion implantation of a junction butting region (2015-09-15),

12. 7932144 - Semiconductor structure and method of forming the structure (2011-04-26),

13. 7781239 - Semiconductor device defect type determination method and structure (2010-08-24),

14. 7767579 - Protection of SiGe during etch and clean operations (2010-08-03),

15. 7714358 - Semiconductor structure and method of forming the structure (2010-05-11),

Title: Inventor Katsunori Onishi: Pioneering Innovations in Somers, NY

Introduction: Katsunori Onishi is a renowned inventor based in Somers, NY, known for his groundbreaking contributions to various technological fields.

Latest Patents: Katsunori Onishi holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Katsunori Onishi has worked with leading research institutions and companies to develop cutting-edge technologies that have had a significant impact on society.

Collaborations: Throughout his career, Katsunori Onishi has collaborated with top engineers, scientists, and inventors, fostering a culture of innovation and excellence in all his projects.

Conclusion: Inventor Katsunori Onishi's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the field of inventions.

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4 patents pending:

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