Katsunori Onishi

This inventor holds 16 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2007-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsunori Onishi. Retrieved from https://idiyas.com/inventor/katsunori-onishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 16 (Patent Applications = 4)

% Patents Active = 56.3

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 39(Granted Patents)

Location History:

Fukuoka, JP (2010)
Fishkill, NY (US) (2007 - 2016)
Somers, NY (US) (2015 - 2020)

Company Filing History:

9 out of 166,483

International Business Machines Corporation

Years Active: 2007-2020

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Areas of Expertise:

Short Channel Devices

Long Channel Devices

Replacement Metal Gate

Gate Height Control

Performance Optimized Structures

Asymmetric Stressor DRAM

Low Energy Ion Implantation

Semiconductor Structures

Defect Type Determination

Gate Oxides

Memory Devices

Logic Devices

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10741668 - Short channel and long channel devices (2020-08-11),

2. 10658363 - Cut inside replacement metal gate trench to mitigate N-P proximity effect (2020-05-19),

3. 10446550 - Cut inside replacement metal gate trench to mitigate N-P proximity effect (2019-10-15),

4. 10354928 - Integration scheme for gate height control and void free RMG fill (2019-07-16),

5. 10242982 - Method for forming a protection device having an inner contact spacer and the resulting devices (2019-03-26),

6. 10056303 - Integration scheme for gate height control and void free RMG fill (2018-08-21),

7. 9761679 - Performance optimized gate structures having memory device and logic device, the memory device with silicided source/drain regions that are raised with respect to silicided source/drain regions of the logic device (2017-09-12),

8. 9735058 - Method of forming performance optimized gate structures by silicidizing lowered source and drain regions (2017-08-15),

9. 9455195 - Method of forming performance optimized gate structures by silicidizing lowered source and drain regions (2016-09-27),

10. 9240482 - Asymmetric stressor DRAM (2016-01-19),

11. 9136321 - Low energy ion implantation of a junction butting region (2015-09-15),

12. 7932144 - Semiconductor structure and method of forming the structure (2011-04-26),

13. 7781239 - Semiconductor device defect type determination method and structure (2010-08-24),

14. 7767579 - Protection of SiGe during etch and clean operations (2010-08-03),

15. 7714358 - Semiconductor structure and method of forming the structure (2010-05-11),

Title: Inventor Katsunori Onishi: Pioneering Innovations in Somers, NY

Introduction: Katsunori Onishi is a renowned inventor based in Somers, NY, known for his groundbreaking contributions to various technological fields.

Latest Patents: Katsunori Onishi holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Katsunori Onishi has worked with leading research institutions and companies to develop cutting-edge technologies that have had a significant impact on society.

Collaborations: Throughout his career, Katsunori Onishi has collaborated with top engineers, scientists, and inventors, fostering a culture of innovation and excellence in all his projects.

Conclusion: Inventor Katsunori Onishi's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the field of inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

4 patents pending: