The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Jul. 19, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Bala Haran, Watervliet, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Balaji Kannan, Clifton Park, NY (US);
Katsunori Onishi, Somers, NY (US);
Vimal K. Kamineni, Mechanicville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/161 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28506 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 21/823842 (2013.01); H01L 29/161 (2013.01); H01L 29/6656 (2013.01); H01L 29/66613 (2013.01); H01L 21/82345 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/785 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to replacement metal gate structures and methods of manufacture. The structure includes at least one short channel device including a dielectric material, a workfunction metal, and a capping material, and a long channel device comprising the dielectric material, the workfunction metal and fluorine free gate conductor material.