Bala S Haran

Title: Innovations of Bala S Haran

Introduction

Bala S Haran is a notable inventor based in Watervliet, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work primarily focuses on advancements in FinFET structures and methods of manufacture.

Latest Patents

One of his latest patents is titled "Additional spacer for self-aligned contact for only high voltage FinFETs." This method involves forming a first region with a pair of first FinFETs and a second region with a pair of second FinFETs on a substrate. Each FinFET includes a metal gate with a first spacer adjacent to it, where the first FinFETs are designed to handle higher voltage input/output. The method also details the formation of contacts between the metal gates of the FinFETs, enhancing their functionality. Another significant patent is "Short channel and long channel devices," which relates to semiconductor structures, specifically replacement metal gate structures. This patent includes details about short and long channel devices, emphasizing the materials used in their construction.

Career Highlights

Bala S Haran has worked with prominent companies in the technology sector, including Globalfoundries Inc. and International Business Machines Corporation (IBM). His experience in these organizations has contributed to his expertise in semiconductor innovations.

Collaborations

Throughout his career, Bala has collaborated with talented individuals such as Balaji Kannan and Katsunori Onishi. These collaborations have likely enriched his work and led to further advancements in his field.

Conclusion

Bala S Haran's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry significantly.