The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Feb. 26, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Bala Haran, Watervliet, NY (US);

Christopher Sheraw, Ballston Spa, NY (US);

Mahender Kumar, San Jose, CA (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 29/0649 (2013.01); H01L 29/4238 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01);
Abstract

One illustrative integrated circuit product disclosed herein includes a plurality of FinFET transistor devices, a plurality of fins, each of the fins having an upper surface, and an elevated isolation structure having an upper surface that is positioned at a level that is above a level of the upper surface of the fins. In this example, the product also includes a first gate structure having an axial length in a direction corresponding to the gate width direction of the transistor devices, wherein at least a portion of the axial length of the first gate structure is positioned above the upper surface of the elevated isolation structure.


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