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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Christopher D Sheraw

USPTO Granted Patents = 26

Average Co-Inventor Count = 5.7

ph-index = 7

Forward Citations = 107(Granted Patents)


Location History:

  • Poughkeepsie, NY (US) (2009 - 2011)
  • Hopewell Junction, NY (US) (2013)
  • Wappingers Falls, NY (US) (2006 - 2017)
  • Ballston Spa, NY (US) (2018 - 2020)
  • Severn, MD (US) (2021)

Company Filing History:

goldMedal19 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal7 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal3 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
4. 1 out of 927 
 
Globalfoundries U.S. Inc.
 patents
where one patent can have more than one assignee

Years Active: 2006-2021

where 'Filed Patents' based on already Granted Patents

26 patents (USPTO):
1. 10991689 - Additional spacer for self-aligned contact for only high voltage FinFETs (2021-04-27),
2. 10566328 - Integrated circuit products with gate structures positioned above elevated isolation structures (2020-02-18),
3. 10396078 - Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same (2019-08-27),
4. 10020307 - Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same (2018-07-10),
5. 9953873 - Methods of modulating the morphology of epitaxial semiconductor material (2018-04-24),
6. 9634084 - Conformal buffer layer in source and drain regions of fin-type transistors (2017-04-25),
7. 9287399 - Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels (2016-03-15),
8. 8940595 - Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels (2015-01-27),
9. 8557649 - Method for controlling structure height (2013-10-15),
10. 8497212 - Filling narrow openings using ion beam etch (2013-07-30),
11. 7956417 - Method of reducing stacking faults through annealing (2011-06-07),
12. 7911024 - Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof (2011-03-22),
13. 7893493 - Stacking fault reduction in epitaxially grown silicon (2011-02-22),
14. 7871893 - Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices (2011-01-18),
15. 7820501 - Decoder for a stationary switch machine (2010-10-26),

Title: The Innovative Contributions of Christopher D. Sheraw

Introduction: Christopher D. Sheraw, based in Wappingers Falls, NY, is a prominent inventor known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 26 patents, Sheraw has played a vital role in advancing innovations that facilitate the development of high-performance electronic devices.

Latest Patents: Two of Sheraw's latest patents exemplify his groundbreaking work. The first, titled "Additional spacer for self-aligned contact for only high voltage FinFETs," outlines a method for creating FinFETs on a substrate. This invention allows for high voltage input/output devices by manipulating gate dielectrics and spacers to optimize performance.

The second patent, "Integrated circuit products with gate structures positioned above elevated isolation structures," describes an innovative approach to integrated circuit design. This patent involves the use of FinFET transistor devices, fins, and elevated isolation structures to improve the efficiency and placement of gate structures within semiconductor products.

Career Highlights: Christopher Sheraw has made impactful contributions while working with leading companies in the technology sector, including International Business Machines Corporation (IBM) and Globalfoundries Inc. His expertise and innovative mindset have paved the way for advancements in semiconductor technologies.

Collaborations: Throughout his career, Sheraw has collaborated with notable peers, including Judson Robert Holt and Mahender Kumar. These partnerships have further enriched the development of innovative solutions within the industry.

Conclusion: Christopher D. Sheraw stands as a notable figure in the realm of semiconductor innovation. His extensive patent portfolio and collaborative efforts reflect his commitment to advancing technology and enhancing electronic devices. As the industry continues to evolve, Sheraw's contributions will undoubtedly leave a lasting impact on the future of technology.

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