The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2013

Filed:

Oct. 21, 2011
Applicants:

Rajasekhar Venigalla, Hopewell Junction, NY (US);

Michael Vincent Aquilino, Hopewell Junction, NY (US);

Massud A. Aminpur, Hopewell Junction, NY (US);

Michael P. Belyansky, Hopewell Junction, NY (US);

Unoh Kwon, Hopewell Junction, NY (US);

Christopher Duncan Sheraw, Hopewell Junction, NY (US);

Daewon Yang, Hopewell Junction, NY (US);

Inventors:

Rajasekhar Venigalla, Hopewell Junction, NY (US);

Michael Vincent Aquilino, Hopewell Junction, NY (US);

Massud A. Aminpur, Hopewell Junction, NY (US);

Michael P. Belyansky, Hopewell Junction, NY (US);

Unoh Kwon, Hopewell Junction, NY (US);

Christopher Duncan Sheraw, Hopewell Junction, NY (US);

Daewon Yang, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for controlling the height of semiconductor structures are disclosed. Amorphous carbon is used as a stopping layer for controlling height variability. In one embodiment, the height of replacement metal gates for transistors is controlled. In another embodiment, the step height of a shallow trench isolation region is controlled.


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