The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Jul. 10, 2006
Yun-yu Wang, Poughquag, NY (US);
Linda Black, Wappingers Falls, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Woo-hyeong Lee, Poughquag, NY (US);
Scott Luning, Poughkeepsie, NY (US);
Christopher D. Sheraw, Poughkeepsie, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Linda Black, Wappingers Falls, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Woo-Hyeong Lee, Poughquag, NY (US);
Scott Luning, Poughkeepsie, NY (US);
Christopher D. Sheraw, Poughkeepsie, NY (US);
International Business Machines Corproation, Armonk, NY (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An intermediate hybrid surface orientation structure may include a silicon-on-insulator (SOI) substrate adhered to a bulk silicon substrate, the silicon of the SOI substrate having a different surface orientation than that of the bulk silicon substrate, and a reachthrough region extending through the SOI substrate to the bulk silicon substrate, the reachthrough region including a silicon nitride liner over a silicon oxide liner and a silicon epitaxially grown from the bulk silicon substrate, the epitaxially grown silicon extending into an undercut into the silicon oxide liner under the silicon nitride liner, wherein the epitaxially grown silicon is substantially stacking fault free.