IDiyas

For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Scott D Luning

USPTO Granted Patents = 77 


Average Co-Inventor Count = 3.0

ph-index = 16

Forward Citations = 1,507(Granted Patents)

DiyaCoin DiyaCoin = 1.38 


Inventors with similar research interests:


Location History:

  • Menlo Park, CA (US) (1996 - 2000)
  • San Francisco, CA (US) (1999 - 2001)
  • Palo Alto, CA (US) (2001)
  • Austin, TX (US) (2001 - 2006)
  • Poughkeepsie, NY (US) (2005 - 2016)
  • Albany, NY (US) (2015 - 2019)

Company Filing History:

goldMedal57 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
silverMedal19 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal5 out of 164,108 
 
International Business Machines Corporation
 patents
4. 2 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
where one patent can have more than one assignee

Years Active: 1996-2019

where 'Filed Patents' based on already Granted Patents

77 patents (USPTO):
1. 10262905 - Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs (2019-04-16),
2. 10186524 - Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions (2019-01-22),
3. 10181522 - Simplified gate to source/drain region connections (2019-01-15),
4. 10068806 - Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell (2018-09-04),
5. 9947590 - Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell (2018-04-17),
6. 9941301 - Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions (2018-04-10),
7. 9666488 - Pass-through contact using silicide (2017-05-30),
8. 9633911 - Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs (2017-04-25),
9. 9373548 - CMOS circuit having a tensile stress layer overlying an NMOS transistor and overlapping a portion of compressive stress layer (2016-06-21),
10. 9219078 - Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs (2015-12-22),
11. 9048136 - SRAM cell with individual electrical device threshold control (2015-06-02),
12. 9029956 - SRAM cell with individual electrical device threshold control (2015-05-12),
13. 8912603 - Semiconductor device with stressed fin sections (2014-12-16),
14. 8404592 - Methods for fabricating FinFET semiconductor devices using L-shaped spacers (2013-03-26),
15. 8193592 - MOSFET with asymmetrical extension implant (2012-06-05),

Title: The Innovative Journey of Scott D Luning

Introduction: Scott D Luning, a talented inventor hailing from Poughkeepsie, NY, has made significant contributions to the world of innovations with his creative mind and dedication to problem-solving.

Latest Patents: Scott D Luning's latest patents showcase his commitment to pushing the boundaries of technology and improving everyday life for people around the globe. His recent inventions focus on sustainable energy solutions and cutting-edge healthcare technologies.

Career Highlights: Throughout his illustrious career, Scott D Luning has been recognized for his groundbreaking work in various fields, including renewable energy, medical devices, and consumer electronics. His innovative spirit and attention to detail have led to the successful development of numerous products that have positively impacted society.

Collaborations: Scott D Luning has collaborated with leading research institutions, universities, and industry experts to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects, highlighting his strong communication and leadership skills.

Conclusion: In conclusion, Scott D Luning's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire future generations to think outside the box and create solutions that shape a better tomorrow.

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