The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Feb. 21, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Tuhin Guha Neogi, Clifton Park, NY (US);
Scott D. Luning, Albany, NY (US);
David Pritchard, Glenville, NY (US);
Kasun Anupama Punchihewa, Naperville, IL (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/665 (2013.01); H01L 21/823835 (2013.01); H01L 21/823864 (2013.01); H01L 21/823885 (2013.01); H01L 29/42356 (2013.01); H01L 29/66553 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
Structures for a field-effect transistor and fabrication methods for forming a structure for a field-effect transistor. The structure may include a gate electrode, a source/drain region formed adjacent to a vertical sidewall of the gate electrode, and a conductive link that couples the vertical sidewall of the gate electrode with the source/drain region.