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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Tuhin Guha Neogi

USPTO Granted Patents = 17 

Average Co-Inventor Count = 5.4

ph-index = 5

Forward Citations = 68(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (2017 - 2018)
  • Clifton Park, NY (US) (2015 - 2019)
  • Fishkill, NY (US) (2017 - 2020)

Company Filing History:

goldMedal17 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2015-2020

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17 patents (USPTO):
1. 10559503 - Methods, apparatus and system for a passthrough-based architecture (2020-02-11),
2. 10262941 - Devices and methods for forming cross coupled contacts (2019-04-16),
3. 10236350 - Method, apparatus and system for a high density middle of line flow (2019-03-19),
4. 10181522 - Simplified gate to source/drain region connections (2019-01-15),
5. 10068806 - Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell (2018-09-04),
6. 10056373 - Transistor contacts self-aligned in two dimensions (2018-08-21),
7. 9947590 - Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell (2018-04-17),
8. 9818651 - Methods, apparatus and system for a passthrough-based architecture (2017-11-14),
9. 9666488 - Pass-through contact using silicide (2017-05-30),
10. 9660040 - Transistor contacts self-aligned two dimensions (2017-05-23),
11. 9502528 - Borderless contact formation through metal-recess dual cap integration (2016-11-22),
12. 9472455 - Methods of cross-coupling line segments on a wafer (2016-10-18),
13. 9461128 - Method for creating self-aligned transistor contacts (2016-10-04),
14. 9236437 - Method for creating self-aligned transistor contacts (2016-01-12),
15. 9202751 - Transistor contacts self-aligned in two dimensions (2015-12-01),

Title: Innovative Contributions of Tuhin Guha Neogi in Semiconductor Technology

Introduction

Tuhin Guha Neogi, residing in Clifton Park, NY, is a notable inventor with a significant contribution to semiconductor technology. With an impressive portfolio of 17 patents, his innovative spirit is evident in his work at Globalfoundries Inc.

Latest Patents

Among his latest patents, Neogi has developed methods, apparatus, and systems for a passthrough-based architecture. This patent outlines a method for forming a finFET device with a pass-through structure, involving the formation of first and second gate structures on a semiconductor wafer, as well as active areas designed to enhance device performance. Another noteworthy patent details devices and methods for forming cross-coupled contacts in semiconductor devices. This invention employs advanced patterning techniques to achieve precise isolation regions, enhancing the manufacturing processes of semiconductor devices.

Career Highlights

Neogi's career at Globalfoundries Inc. has been marked by significant achievements in semiconductor research and development. His work in creating innovative device structures has played a crucial role in advancing the capabilities of semiconductors, which are vital components in modern electronic devices.

Collaborations

Throughout his career, Neogi has collaborated with talented professionals such as Guillaume Bouche and Jason Eugene Stephens. These partnerships have fostered a collaborative environment, allowing for a rich exchange of ideas and innovations within the semiconductor field.

Conclusion

Tuhin Guha Neogi's contributions to the industry exemplify the essence of innovation in semiconductor technology. His patents not only reflect his ingenuity but also pave the way for future advancements in the field, reinforcing his status as a leading inventor in the industry.

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