The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Apr. 22, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Guillaume Bouche, Albany, NY (US);

Jason Eugene Stephens, Menands, NY (US);

Tuhin Guha Neogi, Clifton Park, NY (US);

Kai Sun, Clifton Park, NY (US);

Deniz Elizabeth Civay, Clifton Park, NY (US);

David Charles Pritchard, Glenville, NY (US);

Andy Wei, Kanata, CA;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/33 (2006.01); H01L 23/528 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32133 (2013.01); H01L 21/762 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76841 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01);
Abstract

Semiconductor devices and methods of fabricating the semiconductor devices with cross coupled contacts using patterning for cross couple pick-up are disclosed. One method includes, for instance: obtaining an intermediate semiconductor device; performing a first lithography to pattern a first shape; performing a second lithography to pattern a second shape overlapping a portion of the first shape; processing the first shape and the second shape to form an isolation region at the overlap; and forming four regions separated by the isolation region. An intermediate semiconductor device is also disclosed.


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