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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Kai Sun

This inventor holds 7 USPTO granted patents. Top assignees: Globalfoundries U.S. Inc., Globalfoundries Inc.. Active years: 2019-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kai Sun. Retrieved from https://idiyas.com/inventor/kai-sun-5s2qvsgk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 7.3

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:

goldMedal4 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
silverMedal3 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2019-2022

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7 patents (USPTO):Explore Patents
1. 11276651 - IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure (2022-03-15),
2. 11239087 - Fully depleted devices with slots in active regions (2022-02-01),
3. 11177182 - Vertical transistor device comprising a two-dimensional (2D) material positioned in a channel region of the device and methods of making such vertical transistor devices (2021-11-16),
4. 11094791 - Vertical transistor device with source/drain regions comprising a twi-dimensional (2D) material and methods of making such vertical transistor devices (2021-08-17),
5. 10796056 - Optimizing library cells with wiring in metallization layers (2020-10-06),
6. 10497576 - Devices with slotted active regions (2019-12-03),
7. 10262941 - Devices and methods for forming cross coupled contacts (2019-04-16),

Title: Innovations of Inventor Kai Sun

Introduction

Kai Sun is a notable inventor based in Clifton Park, NY (US), recognized for his contributions to semiconductor technology. With a total of seven patents to his name, he has made significant advancements in the field of integrated circuit (IC) products.

Latest Patents

Among his latest patents is an innovative IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure. This device includes a semiconductor substrate and a FinFET transistor device positioned above it, featuring a single active fin structure. Additionally, it incorporates an electrically inactive dummy fin structure adjacent to the active fin, which does not participate in the electrical operation of the FinFET transistor. Another notable patent involves fully depleted devices with slots in active regions. This patent details semiconductor structures with slotted active regions and outlines methods of manufacture, including the formation of mandrels and spacers to create slots in the diffusion region.

Career Highlights

Kai Sun has worked with prominent companies in the semiconductor industry, including GlobalFoundries U.S. Inc. and GlobalFoundries Inc. His work has contributed to the development of advanced semiconductor technologies that are crucial for modern electronic devices.

Collaborations

Some of his notable coworkers include David C. Pritchard and Heng Yang, who have collaborated with him on various projects in the semiconductor field.

Conclusion

Kai Sun's innovative work in semiconductor technology and his impressive portfolio of patents highlight his significant impact on the industry. His contributions continue to shape the future of integrated circuit design and manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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