The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

May. 18, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Anton Tokranov, Cohoes, NY (US);

Kai Sun, Clifton Park, NY (US);

Elizabeth Strehlow, Malta, NY (US);

James Mazza, Saratoga Springs, NY (US);

David Pritchard, Glenville, NY (US);

Heng Yang, Rexford, NY (US);

Mohamed Rabie, Clifton Park, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 29/0653 (2013.01); H01L 29/42376 (2013.01); H01L 29/6681 (2013.01); H01L 29/7851 (2013.01);
Abstract

An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.


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