Anton Tokranov

Title: Anton Tokranov: Innovator in Semiconductor Technology

Introduction

Anton Tokranov is a notable inventor based in Cohoes, NY (US), recognized for his contributions to semiconductor technology. With a total of four patents to his name, Tokranov has made significant advancements in the field, particularly in the design and functionality of transistors.

Latest Patents

One of Tokranov's latest patents is titled "Structure having different gate dielectric widths in different regions of substrate." This invention discloses a structure and method for forming different high dielectric constant (high-K) gate dielectrics for various transistors on the same substrate. The first region includes a first transistor with a gate structure that has a first gate body over a first high-K gate dielectric. The first gate body and the first high-K gate dielectric have different widths, defining a first width difference. In contrast, the second region includes a second transistor with a second gate structure that has a second gate body over a second high-K gate dielectric, with a different width difference. This innovative approach improves control of overlap capacitance of the transistors without increasing dopants or annealing temperature.

Another significant patent is for an "IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure." This device includes a semiconductor substrate and a FinFET transistor device positioned above it, featuring a single active fin structure. Adjacent to this active fin structure is an electrically inactive dummy fin structure, which does not participate in the electrical operation of the FinFET transistor. This design enhances the performance and reliability of semiconductor devices.

Career Highlights

Tokranov is currently employed at GlobalFoundries U.S. Inc., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing advanced technologies that are crucial for modern electronic devices.

Collaborations

Throughout his career, Tokranov has collaborated with talented individuals such as Hong Yu and Elizabeth Strehlow. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Anton Tokranov's contributions to semiconductor technology through his patents and work at GlobalFoundries U.S. Inc. highlight his role as a leading inventor in the field. His innovative designs and collaborative efforts continue to shape the future of electronics.