The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Dec. 07, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Min Gyu Sung, Latham, NY (US);

Susan Ng Emans, Albany, NY (US);

Tao Li, Slingerlands, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Anton Tokranov, Halfmoon, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 46/00 (2026.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/118 (2025.01); H10D 30/014 (2025.01); H10D 30/63 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 84/834 (2025.01); H10W 46/00 (2026.01);
Abstract

A semiconductor device includes a nanosheet field effect transistor (FET), and an overlay mark adjacent to the nanosheet FET. The overlay mark includes a middle section, a first vertical spacer segment adjacent to a first end of the overlay mark, and a second vertical spacer segment adjacent to a second end of the overlay mark. The first vertical spacer segment and the second vertical spacer segment are isolated from direct contact with the middle section by a shallow trench isolation (STI).


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