Albany, NY, United States of America

Susan Ng Emans

This inventor holds 4 USPTO granted patents and 6 published patent applications. Top assignee: International Business Machines Corporation. Active years: 2026.

USPTO Granted Patents = 4 

Average Co-Inventor Count = 6.7

ph-index = 1


Company Filing History:


Years Active: 2026

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4 patents (USPTO):Explore Patents

Title: Susan Ng Emans: Innovator in Semiconductor Technology

Introduction

Susan Ng Emans is a prominent inventor based in Albany, NY (US). She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique patent that enhances the functionality of transistors.

Latest Patents

Susan holds a patent for a "Diffusion break structure for transistors." This semiconductor device features a first gate region and a second gate region, with a diffusion break region positioned between them. Notably, the top surface of the diffusion break region is co-planar with at least one of the top surfaces of the gate contacts and the source/drain contacts. This innovation is crucial for improving the performance and efficiency of semiconductor devices.

Career Highlights

Susan is currently employed at International Business Machines Corporation, commonly known as IBM. Her role at IBM allows her to work on cutting-edge technologies and contribute to advancements in the semiconductor industry. With her expertise, she has become a valuable asset to her team and the company.

Collaborations

Susan has collaborated with Ruilong Xie, a fellow innovator in the field. Their partnership has fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Susan Ng Emans is a trailblazer in semiconductor technology, with her patent and work at IBM showcasing her dedication to innovation. Her contributions are paving the way for future advancements in the industry.

Profile summary based on public USPTO records.
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