The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Apr. 12, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Anton V. Tokranov, Halfmoon, NY (US);

Hong Yu, Clifton Park, NY (US);

Edward P. Reis, Jr., Ballston Spa, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 64/514 (2025.01); H10D 84/0144 (2025.01); H10D 84/038 (2025.01);
Abstract

A structure and method of forming different high dielectric constant (high-K) gate dielectrics for different transistors on the same substrate, are disclosed. A first region includes a first transistor(s) on the substrate having a first gate structure having a first gate body over a first high-K gate dielectric. The first gate body and the first high-K gate dielectric have different widths defining a first width difference. A second region includes a second transistor(s) on the substrate having a second gate structure having a second gate body over a second high-K gate dielectric. The second gate body and the second high-K gate dielectric have different widths defining a second width difference. The first width difference is different than the second width difference, i.e., amongst transistors in the different regions. The different gate dielectric widths improve control of overlap capacitance of the transistors without increasing dopants or an annealing temperature.


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