The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Nov. 20, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Meixiong Zhao, Ballston Lake, NY (US);
Randy W. Mann, Milton, NY (US);
Sanjay Parihar, Austin, TX (US);
Anton Tokranov, Cohoes, NY (US);
Hong Yu, Rexford, NY (US);
Hongliang Shen, Ballston Lake, NY (US);
Guoxiang Ning, Clifton Park, NY (US);
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Abstract
Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.