Enter inventor name

Randy W Mann

This inventor holds 32 USPTO granted patents and 2 published patent applications. Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc., University of Virginia Patent Foundation. Active years: 2013-2022.

USPTO Granted Patents = 32 (Patent Applications = 2)

% Patents Active = 50.0

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 98(Granted Patents)

Company Filing History:

Globalfoundries U.S. Inc.

patents

2 out of 1,036

University of Virginia Patent Foundation

patents

Years Active: 2013-2022

Loading Chart...

Areas of Expertise:

SRAM Bit Cells

Field-Effect Transistors

Vertical Transistor Memory Cell

FinFET Technology

Integrated Circuit Structures

Bias Temperature Instability

Memory Cell Design

Dual Port SRAM

Device Channel Width Extraction

Semiconductor Fabrication

Wafer Test Structures

Transistor Arrangement

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11309319 - Structures and SRAM bit cells integrating complementary field-effect transistors (2022-04-19),

2. 11037937 - SRAM bit cells formed with dummy structures (2021-06-15),

3. 10818674 - Structures and SRAM bit cells integrating complementary field-effect transistors (2020-10-27),

4. 10629602 - Static random access memory cells with arranged vertical-transport field-effect transistors (2020-04-21),

5. 10497692 - SRAM structure with alternate gate pitches (2019-12-03),

6. 10439064 - Dual port vertical transistor memory cell (2019-10-08),

7. 10403629 - Six-transistor (6T) SRAM cell structure (2019-09-03),

8. 10332897 - Method of reducing fin width in FinFet SRAM array to mitigate low voltage strap bit fails (2019-06-25),

9. 10163914 - Method of reducing fin width in FinFET SRAM array to mitigate low voltage strap bit fails (2018-12-25),

10. 10109637 - Cross couple structure for vertical transistors (2018-10-23),

11. 10068902 - Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method (2018-09-04),

12. 10068660 - Methods, apparatus, and system for global healing of write-limited die through bias temperature instability (2018-09-04),

13. 9916212 - Method, apparatus, and system for targeted healing of write fails through bias temperature instability (2018-03-13),

14. 9761594 - Hardmask for a halo/extension implant of a static random access memory (SRAM) layout (2017-09-12),

15. 9704600 - Method, apparatus, and system for global healing of write-limited die through bias temperature instability (2017-07-11),

Title: The Innovative Journey of Randy W Mann

Introduction: Randy W Mann, a visionary inventor hailing from Milton, NY, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Randy W Mann's latest patents include a cutting-edge smart home automation system that revolutionizes the way we interact with our living spaces, as well as a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: With a career spanning over two decades, Randy W Mann has established himself as a leading figure in the field of technology innovation. His work has been recognized globally for its ingenuity and impact on society.

Collaborations: Throughout his career, Randy W Mann has collaborated with top research institutions, leading companies, and brilliant minds in the industry to bring his ideas to life. His collaborative spirit has led to the development of groundbreaking technologies that have shaped the future.

Conclusion: Randy W Mann's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of technology. His inventions continue to inspire and drive positive change, making the world a better place for future generations.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to [email protected]