logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10497692 B1

PDFFull Text
Date of Patent:
Dec. 03, 2019

Filed:

Aug. 29, 2017

Sram structure with alternate gate pitches

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Randy W. Mann, Milton, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Francois Pagette

Andrew M. Calderon

Roberts Mlotkowski Safran Cole & Calderon, P.C.

Primary Examiner:

Ly D Pham

Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 5/02 (2006.01); G11C 7/00 (2006.01); G11C 5/14 (2006.01); H01L 27/11 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/8238 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/7682 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/82385 (2013.01); H01L 21/823871 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 27/092 (2013.01); H01L 27/1104 (2013.01); H01L 29/42376 (2013.01); G11C 5/02 (2013.01); G11C 5/025 (2013.01); H01L 23/5286 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a SRAM structure with alternate gate pitches and methods of manufacture. The structure includes an array of memory cells having a plurality of gate structures with varying gate pitches, the varying gate pitches comprising a first dimension sized for placement of a bitline contact and a second dimension sized for placement of source/drain contacts, the first dimension being larger than the second dimension.

Find Patent Forward Citations

Zang, Hui. (2019). Sram structure with alternate gate pitches (U.S. Patent No. 10497692). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10497692

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…