The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
May. 05, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Anton V. Tokranov, Cohoes, NY (US);
James P. Mazza, Saratoga Springs, NY (US);
Elizabeth A. Strehlow, Malta, NY (US);
Harold Mendoza, Ballston Lake, NY (US);
Jay A. Mody, Ballston Spa, NY (US);
Clynn J. Mathew, Clifton Park, NY (US);
Hong Yu, Rexford, NY (US);
Yea-Sen Lin, East Fishkill, NY (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.