Globalfoundries U.S. Inc.

Anton Tokranov

Hong Yu

Elizabeth Strehlow

James Mazza

Guoxiang Ning

Randy W Mann

David C Pritchard

Hongliang Shen

Heng Yang

Kai Sun

Meixiong Zhao

Sanjay Parihar

Mohamed Rabie

Jay A Mody

Harold Mendoza

Edward P Reis, Jr

Clynn J Mathew

Yea-Sen Lin

A structure and method of forming different high dielectric constant (high-K) gate dielectrics for different transistors on the same substrate, are disclosed. A first region includes a first transistor(s) on the substrate having a first gate structure having a first gate body over a first high-K gate dielectric. The first gate body and the first high-K gate dielectric have different widths defining a first width difference. A second region includes a second transistor(s) on the substrate having a second gate structure having a second gate body over a second high-K gate dielectric. The second gate body and the second high-K gate dielectric have different widths defining a second width difference. The first width difference is different than the second width difference, i.e., amongst transistors in the different regions. The different gate dielectric widths improve control of overlap capacitance of the transistors without increasing dopants or an annealing temperature.

Structure having different gate dielectric widths in different regions of substrate

An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.

IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure

An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.

IC structure with single active region having different doping profile than set of active regions

Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.

SRAM bit cells formed with dummy structures

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Cohoes, NY, United States of America

Anton Tokranov