The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Jan. 30, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Heng Yang, Rexford, NY (US);
David Pritchard, Glenville, NY (US);
Kai Sun, Clifton Park, NY (US);
Hongru Ren, Mechanicville, NY (US);
Neha Nayyar, Clifton Park, NY (US);
Manjunatha Prabhu, Clifton Park, NY (US);
Elizabeth Strehlow, Malta, NY (US);
Salvatore Cimino, Waterford, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823885 (2013.01); H01L 21/82385 (2013.01); H01L 21/823814 (2013.01);
Abstract
One illustrative vertical transistor device disclosed herein includes a channel region comprising at least one layer of a two-dimensional (2D) material, a bottom source/drain region, a top source/drain region and a gate structure positioned all around at least the at least one layer of a two-dimensional (2D) material.