Neha Nayyar

Title: Neha Nayyar: Innovator in Planar Transistor Technology

Introduction

Neha Nayyar is a prominent inventor based in Clifton Park, NY (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of planar transistor devices. With a total of 11 patents to her name, Nayyar's work is at the forefront of innovation in this area.

Latest Patents

Nayyar's latest patents include a groundbreaking planar transistor device that comprises at least one layer of a two-dimensional (2D) material. This device features a gate structure positioned above a semiconductor substrate, which includes a substantially planar upper surface, a channel region, a source region, and a drain region. The 2D material layer is strategically positioned in at least one of these regions, ensuring a uniform vertical thickness and parallel surfaces to the semiconductor substrate. This innovation enhances the performance and efficiency of transistor devices.

Career Highlights

Throughout her career, Neha Nayyar has worked with notable companies such as GlobalFoundries U.S. Inc. and GlobalFoundries Inc. Her experience in these organizations has allowed her to refine her skills and contribute to cutting-edge technology in the semiconductor industry.

Collaborations

Nayyar has collaborated with esteemed colleagues, including David C. Pritchard and Heng Yang. These partnerships have fostered a collaborative environment that promotes innovation and the advancement of technology.

Conclusion

Neha Nayyar's contributions to planar transistor technology exemplify her dedication to innovation in the semiconductor field. Her patents and career achievements highlight her role as a leading inventor in this dynamic industry.