The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Aug. 20, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Heng Yang, Rexford, NY (US);

David C. Pritchard, Glenville, NY (US);

George J. Kluth, Saratoga Springs, NY (US);

Anurag Mittal, San Jose, CA (US);

Hongru Ren, Mechanicville, NY (US);

Manjunatha G. Prabhu, Clifton Park, NY (US);

Kai Sun, Clifton Park, NY (US);

Neha Nayyar, Clifton Park, NY (US);

Lixia Lei, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/6656 (2013.01); H01L 21/02271 (2013.01); H01L 21/31116 (2013.01); H01L 29/7849 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.


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