The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Jun. 07, 2017
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Wanbing Yi, Singapore, SG;

Neha Nayyar, Malta, NY (US);

Curtis Chun-I Hsieh, Singapore, SG;

Mahesh Bhatkar, Singapore, SG;

Wenjun Liu, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

Methods of fabricating a flexible dummy fill to increase MTJ density are provided. Embodiments include forming a first oxide layer; forming lower interconnect layers in the first oxide layer; forming a nitride layer over the first oxide layer and the lower interconnect layers; forming a second oxide layer over the nitride layer; forming bottom electrodes through the second oxide layer and the nitride layer contacting a portion of an upper surface of the lower interconnect layers; forming MTJ structures over the bottom electrodes; forming top electrodes over the MTJ structures; and forming upper interconnect layers over one or more of the top electrodes.


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