The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Oct. 09, 2017
Globalfoundries Inc., Grand Cayman, KY;
Guillaume Bouche, Albany, NY (US);
Tuhin Guha Neogi, Fishkill, NY (US);
Andy Chi-Hung Wei, Queensbury, NY (US);
Jia Zeng, Sunnyvale, CA (US);
Jongwook Kye, Sunnyvale, CA (US);
Jason Eugene Stephens, Menands, NY (US);
Irene Yuh-Ling Lin, Los Altos, CA (US);
Sudharshanan Raghunathan, Mechanicville, NY (US);
Lei Yuan, Cupertino, CA (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.