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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9947590 B1

PDFFull Text
Date of Patent:
Apr. 17, 2018

Filed:

Oct. 14, 2016

Method, apparatus, and system for using a cover mask for enabling metal line jumping over mol features in a standard cell

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

David C. Pritchard, Beacon, NY (US);

Tuhin Guha Neogi, Fishkill, NY (US);

Scott Luning, Albany, NY (US);

David Doman, Austin, TX (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Williams Morgan, P.C.

Primary Examiner:

Savitr Mulpuri

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 21/321 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 21/0274 (2013.01); H01L 21/31111 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 21/823418 (2013.01); H01L 23/5222 (2013.01); H01L 23/5286 (2013.01); H01L 29/0847 (2013.01); H01L 29/66568 (2013.01);
Abstract

At least one method, apparatus and system disclosed involves providing an integrated circuit having metal feature flyover over an middle-of-line (MOL) feature. A first location for a non-contact intersection region between a first middle of line (MOL) interconnect feature and a metal feature in a functional cell is determined. A dielectric feature is formed over the first MOL interconnect feature at the first location. The metal feature is formed over the dielectric layer, the dielectric layer providing a predetermined amount of voltage isolation between the first MOL interconnect feature and the metal feature.

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