IDiyas

For the Inventor, By the Inventor

Austin, TX, United States of America

David Doman

USPTO Granted Patents = 11

Average Co-Inventor Count = 4.0

ph-index = 5

Forward Citations = 58(Granted Patents)


Company Filing History:

goldMedal11 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2013-2018

where 'Filed Patents' based on already Granted Patents

11 patents (USPTO):
1. 10068806 - Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell (2018-09-04),
2. 9947590 - Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell (2018-04-17),
3. 9666488 - Pass-through contact using silicide (2017-05-30),
4. 9196548 - Methods of using a trench salicide routing layer (2015-11-24),
5. 9147658 - Stacked power supplies for integrated circuit devices and methods of making the same (2015-09-29),
6. 8987128 - Cross-coupling based design using diffusion contact structures (2015-03-24),
7. 8966423 - Integrating optimal planar and three-dimensional semiconductor design layouts (2015-02-24),
8. 8859416 - Software and method for via spacing in a semiconductor device (2014-10-14),
9. 8689154 - Providing timing-closed FinFET designs from planar designs (2014-04-01),
10. 8618607 - Semiconductor devices formed on a continuous active region with an isolating conductive structure positioned between such semiconductor devices, and methods of making same (2013-12-31),
11. 8598633 - Semiconductor device having contact layer providing electrical connections (2013-12-03),

Title: David Doman: Innovator in Integrated Circuit Technology

Introduction

David Doman is a prominent inventor based in Austin, TX, known for his significant contributions to integrated circuit technology. With a total of 11 patents to his name, Doman has made a notable impact in the field of electronics and semiconductor design.

Latest Patents

One of Doman's latest patents is titled "Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell." This invention involves providing an integrated circuit that features a metal flyover over a middle-of-line (MOL) feature. The patent describes a method for determining a non-contact intersection region between a MOL interconnect feature and a metal feature in a functional cell. A dielectric feature is formed over the MOL interconnect feature, allowing for voltage isolation between the two features.

Career Highlights

David Doman has built a successful career at Globalfoundries Inc., where he has been instrumental in advancing semiconductor technologies. His work has been recognized for its innovation and practical applications in the industry.

Collaborations

Doman has collaborated with notable colleagues such as Mahbub Rashed and Suresh Venkatesan, contributing to various projects that enhance the capabilities of integrated circuits.

Conclusion

David Doman's work in integrated circuit technology exemplifies innovation and dedication to advancing the field. His patents reflect a commitment to improving electronic design and functionality.

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