The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Jul. 30, 2012
Applicants:

Mahbub Rashed, Santa Clara, CA (US);

Marc Tarabbia, Pleasant Valley, NY (US);

Chinh Nguyen, Austin, TX (US);

David Doman, Austin, TX (US);

Juhan Kim, Santa Clara, CA (US);

Xiang Qi, San Jose, CA (US);

Suresh Venkatesan, Danbury, CT (US);

Inventors:

Mahbub Rashed, Santa Clara, CA (US);

Marc Tarabbia, Pleasant Valley, NY (US);

Chinh Nguyen, Austin, TX (US);

David Doman, Austin, TX (US);

Juhan Kim, Santa Clara, CA (US);

Xiang Qi, San Jose, CA (US);

Suresh Venkatesan, Danbury, CT (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); G06F 17/50 (2006.01); H01L 21/768 (2006.01); H01L 27/02 (2006.01); H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); G06F 17/5068 (2013.01); G06F 2217/12 (2013.01); H01L 21/76895 (2013.01); H01L 27/0207 (2013.01); H01L 2027/11861 (2013.01); H01L 2027/11874 (2013.01);
Abstract

An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a first gate cut region across the first gate structure, and a second gate cut region across the second gate structure; providing a first gate contact over the first gate structure, and a second gate contact over the second gate structure; and providing a diffusion contact structure between the first and second gate cut regions to couple the first gate contact to the second gate contact.


Find Patent Forward Citations

Loading…