Xiang Qi

Title: Inventor Xiang Qi's Innovative Cross-Coupling Design

Introduction

Xiang Qi is a notable inventor residing in San Jose, California. With a focus on advancing semiconductor technology, she has made significant contributions to the field of electronic design. Her innovative work has led to the granting of a patent, underscoring her role as a key player in the tech industry.

Latest Patents

Xiang Qi holds one patent titled “Cross-coupling based design using diffusion contact structures.” This invention reveals a novel approach to designing cross-coupling-based systems that utilize diffusion contact structures. The patent details include the provision of first and second gate structures over a substrate, the creation of gate cut regions across these structures, and the installation of gate contacts and diffusion contact structures that enable effective coupling.

Career Highlights

Xiang Qi is employed at GlobalFoundries Inc., a leader in semiconductor manufacturing. Her role in the company highlights her expertise and dedication to innovation within the electronics sector. Her contributions, particularly in the area of cross-coupling designs, mark her as an influential figure in driving technology forward.

Collaborations

Throughout her career, Xiang has collaborated with esteemed coworkers such as Mahbub Rashed and Marc Laurent Tarabbia. These collaborations enhance her work’s effectiveness and enrich the innovation process at GlobalFoundries Inc., fostering a dynamic environment for technological advancement.

Conclusion

Xiang Qi’s pioneering patent and her ongoing contributions at GlobalFoundries Inc. showcase her importance in the realm of technology and innovation. As she continues to push the boundaries of design and functionality within semiconductor technology, her impact on the industry will undoubtedly be lasting.