The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Dec. 28, 2012
Applicants:

Mahbub Rashed, Cupertino, CA (US);

Srikanth Samavedam, Fishkill, NY (US);

David Doman, Austin, TX (US);

Navneet Jain, Milpitas, CA (US);

Subramani Kengeri, San Jose, CA (US);

Suresh Venkatesan, Saratoga Springs, NY (US);

Inventors:

Mahbub Rashed, Cupertino, CA (US);

Srikanth Samavedam, Fishkill, NY (US);

David Doman, Austin, TX (US);

Navneet Jain, Milpitas, CA (US);

Subramani Kengeri, San Jose, CA (US);

Suresh Venkatesan, Saratoga Springs, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/845 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01);
Abstract

Methodology enabling selectively connecting fin structures using a segmented trench salicide layer, and the resulting device are disclosed. Embodiments include: providing on a substrate at least one gate structure; providing first and second fin structures in a vertical direction intersecting with the at least one gate structure; and providing a first segment of a salicide layer, the first segment being formed along a horizontal direction and being connected with the second fin structure and separated from the first fin structure.


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