The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Apr. 07, 2014
Globalfoundries Inc., Grand Cayman, KY;
Andy Chih-Hung Wei, Queensbury, NY (US);
Guillaume Bouche, Albany, NY (US);
Mark A. Zaleski, Galway, NY (US);
Tuhin Guha Neogi, Clifton Park, NY (US);
Jason E. Stephens, Menands, NY (US);
Jongwook Kye, Pleasanton, CA (US);
Jia Zeng, Sunnyvale, CA (US);
GlobalFoundries Inc., Grand Cayman, KY;
Abstract
Embodiments of the present invention provide an improved semiconductor structure and methods of fabrication that provide transistor contacts that are self-aligned in two dimensions. Two different capping layers are used, each being comprised of a different material. The two capping layers are selectively etchable to each other. One capping layer is used for gate coverage while the other capping layer is used for source/drain coverage. Selective etch processes open the desired gates and source/drains, while block masks are used to cover elements that are not part of the connection scheme. A metallization line (layer) is deposited, making contact with the open elements to provide electrical connectivity between them.