The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Mar. 11, 2016
Globalfoundries Inc., Grand Cayman, KY;
Guillaume Bouche, Albany, NY (US);
Tuhin Guha Neogi, Fishkill, NY (US);
Sudharshanan Raghunathan, Santa Clara, CA (US);
Andy Chi-Hung Wei, Queensbury, NY (US);
Jason Eugene Stephens, Hopewell Junction, NY (US);
Vikrant Kumar Chauhan, Clifton Park, NY (US);
David Michael Permana, Ballston Spa, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
At least one method, apparatus and system disclosed herein for forming a finFET device. A gate structure comprising a gate spacer on a semiconductor wafer is formed. A self-aligned contact (SAC) cap is formed over the gate structure. A TS structure is formed. At least one Mmetal structure void is formed. At least one CB structure void adjacent the Mmetal structure void is formed. An etch process is performed the Mand CB structures voids to the gate structure. At least one CA structure void adjacent the CB structure void is formed. The M, CB, and CA structure voids are metallized.