Fishkill, NY, United States of America

Linda R Black


Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 247(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2006 - 2011)
  • Fishkill, NY (US) (2012 - 2013)
  • Wappinger Falls, NY (US) (2013 - 2014)

Company Filing History:


Years Active: 2006-2014

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17 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Linda R. Black

Introduction

Linda R. Black is a prominent inventor based in Fishkill, NY (US), known for her significant contributions to the field of semiconductor technology. With a remarkable portfolio of 17 patents, she has made substantial advancements in the design and functionality of complementary metal oxide semiconductor (CMOS) circuits. Her work has had a lasting impact on the industry, particularly in the development of efficient and effective electronic devices.

Latest Patents

One of Linda's latest patents is titled "Method for growing strain-inducing materials in CMOS circuits in a gate first flow." This invention involves a CMOS circuit that incorporates a substrate and a gate wire over the substrate. The substrate consists of an n-type field effect transistor (n-FET) region, a p-type field effect transistor (p-FET) region, and an isolation region positioned between the n-FET and p-FET regions. The gate wire includes an n-FET gate, a p-FET gate, and gate material that extends transversely from the n-FET gate across the isolation region to the p-FET gate. Additionally, a first conformal insulator covers the gate wire, while a second conformal insulator is placed on the first, positioned over the p-FET gate without extending laterally over the n-FET gate. Straining regions for producing different types of strain are formed in recesses etched into the n-FET and p-FET regions of the substrate.

Another notable patent is related to a "Field effect transistor device." This method outlines the process of forming a field effect transistor device, which includes creating a gate stack portion on a substrate, forming a spacer portion on the gate stack and a portion of the substrate, and subsequently removing an exposed portion of the substrate. The process continues with the epitaxial growth of silicon materials on the substrate, showcasing her innovative approach to semiconductor fabrication.

Career Highlights

Throughout her career, Linda has worked with leading technology companies, including IBM and Advanced Micro Devices Corporation. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking projects in the semiconductor industry.

Collaborations

Linda has collaborated with notable professionals in her field, including Judson Robert Holt and Igor V. Peidous. These partnerships have further enhanced her work and expanded her influence in the industry.

Conclusion

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