The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Nov. 07, 2005
Igor Peidous, Fishkill, NY (US);
Linda R. Black, Wappingers Falls, NY (US);
Frank Wirbeleit, Dresden, DE;
Igor Peidous, Fishkill, NY (US);
Linda R. Black, Wappingers Falls, NY (US);
Frank Wirbeleit, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A stressed MOS device and a method for its fabrication are provided. The MOS device comprises a substrate having a surface, the substrate comprising a monocrystalline semiconductor material having a first lattice constant. A channel region is formed of the monocrystalline silicon material adjacent the surface. A stress inducing monocrystalline semiconductor material having a second lattice constant greater than the first lattice constant is grown under the channel region to exert a horizontal tensile stress on the channel region.