The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Jun. 29, 2010
Kevin K. Chan, Staten Island, NY (US);
Abhishek Dube, Fishkill, NY (US);
Eric C. Harley, Lagrangeville, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Viorel C. Ontalus, Danbury, CT (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Matthew W. Stoker, Poughkeepsie, NY (US);
Keith H. Tabakman, Fishkill, NY (US);
Linda R. Black, Fishkill, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Abhishek Dube, Fishkill, NY (US);
Eric C. Harley, Lagrangeville, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Viorel C. Ontalus, Danbury, CT (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Matthew W. Stoker, Poughkeepsie, NY (US);
Keith H. Tabakman, Fishkill, NY (US);
Linda R. Black, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
GlobalFoundries Inc., , KY;
Abstract
A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material.