IDiyas

For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Matthew W Stoker

USPTO Granted Patents = 16 

Average Co-Inventor Count = 5.9

ph-index = 6

Forward Citations = 61(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (2013 - 2014)
  • Poughkeepsie, NY (US) (2013 - 2016)
  • Poughskeepsie, NY (US) (2017)
  • Ballstown Lake, NY (US) (2019)
  • Ballston Lake, NY (US) (2018 - 2021)

Company Filing History:

goldMedal12 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal8 out of 164,108 
 
International Business Machines Corporation
 patents
where one patent can have more than one assignee

Years Active: 2013-2021

where 'Filed Patents' based on already Granted Patents

16 patents (USPTO):
1. 10910471 - Device with large EPI in FinFETs and method of manufacturing (2021-02-02),
2. 10529831 - Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging (2020-01-07),
3. 10396078 - Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same (2019-08-27),
4. 10204984 - Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicide (2019-02-12),
5. 10121706 - Semiconductor structure including two-dimensional and three-dimensional bonding materials (2018-11-06),
6. 10020307 - Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same (2018-07-10),
7. 9673295 - Contact resistance optimization via EPI growth engineering (2017-06-06),
8. 9287399 - Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels (2016-03-15),
9. 9236477 - Graphene transistor with a sublithographic channel width (2016-01-12),
10. 9190406 - Fin field effect transistors having heteroepitaxial channels (2015-11-17),
11. 8940595 - Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels (2015-01-27),
12. 8779525 - Method for growing strain-inducing materials in CMOS circuits in a gate first flow (2014-07-15),
13. 8618617 - Field effect transistor device (2013-12-31),
14. 8492234 - Field effect transistor device (2013-07-23),
15. 8426265 - Method for growing strain-inducing materials in CMOS circuits in a gate first flow (2013-04-23),

Title: **Inventor Matthew W. Stoker: A Trailblazer in Semiconductor Innovations**

Introduction

Matthew W. Stoker is a renowned inventor based in Poughkeepsie, NY, with an impressive portfolio of 16 patents. His contributions to the field of semiconductor technology have garnered recognition and respect within the industry. Stoker's innovative approach has led to the development of advanced methods in the manufacturing of electronic devices, particularly in the realm of FinFETs and epitaxial formations.

Latest Patents

Among Stoker's notable inventions is his recent patent for a "Device with large EPI in FinFETs and method of manufacturing." This invention focuses on forming logic and memory cells with an epi-RSD width exceeding 1.3 times the fin pitch. It includes a design featuring a source/drain (RSD) region formed on multiple fins over a substrate, ensuring optimal functionality.

Another significant patent pertains to "Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging." This invention outlines methods and systems for creating semiconductor devices that include fins with unique epitaxial formations, enhancing device performance while mitigating merging risks between different formations.

Career Highlights

Throughout his career, Stoker has worked with leading companies in the semiconductor industry, including Globalfoundries Inc. and International Business Machines Corporation (IBM). His experience in these influential institutions has equipped him with the skills and insights necessary to revolutionize semiconductor technology.

Collaborations

Stoker has collaborated with prominent professionals in the field, including Judson Robert Holt and Viorel C. Ontalus. These collaborations have been instrumental in advancing his research and development efforts, fostering an environment of innovation that benefits the broader industry.

Conclusion

As an accomplished inventor in the semiconductor sector, Matthew W. Stoker's work continues to impact the technology landscape significantly. His patents reflect a commitment to innovation and excellence, positioning him as a key figure in shaping the future of electronic device manufacturing. His contributions demonstrate the vital role of inventors in driving technological advancements that benefit society at large.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…