The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Nov. 28, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Rinus T. P. Lee, Ballston Spa, NY (US);

Bharat V. Krishnan, Mechanicville, NY (US);

Hui Zang, Guilderland, NY (US);

Matthew W. Stoker, Ballston Lake, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 29/32 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/823807 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/32 (2013.01);
Abstract

One aspect of the disclosure is directed to a method of forming a semiconductor structure. The method including: removing each fin in a set of fins from between insulator pillars to expose a portion of a substrate between each insulator pillar, the substrate having a first device region and a second device region; forming a first material over the exposed portions of the substrate between each insulator pillar, the first material including a two-dimensional material; forming a second material over the first material in the first device region, the second material including a first three-dimensional bonding material; and forming a third material over the exposed first material in the second device region, the third material including a second three-dimensional bonding material.


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