The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jan. 20, 2014
International Business Machines Corporation, Armonk, NY (US);
Emre Alptekin, Wappingers Falls, NY (US);
Wing L. Lai, Williston, VT (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Matthew W. Stoker, Poughkeepsie, NY (US);
Henry K. Utomo, Newburgh, NY (US);
Reinaldo A. Vega, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disposable gate structures are formed over semiconductor material portions, and source and drain regions can be formed in the semiconductor material portions. After formation of a planarization dielectric layer, one type of disposable gate structure can be removed selective to at least another type of disposable gate structure employing a patterned hard dielectric mask layer. After recessing a surface portion of a body portion, a heteroepitaxial channel portion is formed on the remaining physically exposed portion of the body portion by selective epitaxy of a semiconductor material different from the semiconductor material of the remaining body portion. A plurality of types of heteroepitaxial channel portions can be formed in different types of semiconductor devices. Replacement gate structures can be formed in the gate cavities to provide field effect transistors having different threshold voltages.