The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Feb. 10, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Judson R. Holt, Ballston Lake, NY (US);

Christopher D. Sheraw, Ballston Spa, NY (US);

Timothy J. McArdle, Ballston Lake, NY (US);

Matthew W. Stoker, Ballston Lake, NY (US);

Mira Park, Clifton Park, NY (US);

George R. Mulfinger, Gansevoort, NY (US);

Yinxiao Yang, Troy, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8249 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01);
Abstract

The disclosure is directed to an integrated circuit structure and a method of forming the same. The integrated circuit structure may include: a first device region laterally adjacent to a second device region over a substrate, the first device region including a first fin and the second device region including a second fin; a first source/drain epitaxial region substantially surrounding at least a portion of the first fin; a spacer substantially surrounding the first source/drain epitaxial region, the spacer including an opening in a lateral end portion of the spacer such that the lateral end portion of the spacer overhangs a lateral end portion of the first source/drain epitaxial region; and a liner lining the lateral end portion of the first source/drain epitaxial region beneath the overhanging lateral end portion of the spacer.


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