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Hartford, CT, United States of America

Viorel C Ontalus

USPTO Granted Patents = 61 (Patent Applications = 6)

Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 164(Granted Patents)

Forward Citations (Not Self Cited) = 160(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Fishkill, NY (US) (2012)
Danbury, CT (US) (2008 - 2017)
Hopewell Junction, NY (US) (2011 - 2018)
Hartford, CT (US) (2022 - 2023)
Unionville, CT (US) (2017 - 2024)

Company Filing History:

42 out of 164,197

International Business Machines Corporation

14 out of 5,671

Globalfoundries Inc.

Globalfoundries U.S. Inc.

Globalfoundries U.S. 2 LLC

where one patent can have more than one assignee

Years Active: 2008-2025

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Areas of Expertise:

Heterojunction Bipolar Transistors

Silicon-On-Insulator Technology

Bipolar Junction Transistor

Field-Effect Transistors

Strain-Inducing Materials

Epitaxial Semiconductor Material

CMOS Technology

Source/Drain Doping Profiles

Contact Resistance Optimization

Short-Channel Effects

Self-Aligned Devices

Dielectric Spacers

61 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12336206 - Heterojunction bipolar transistors with a cut stress liner (2025-06-17),

2. 12113070 - Transistor integration on a silicon-on-insulator substrate (2024-10-08),

3. 11916135 - Bipolar transistor (2024-02-27),

4. 11810951 - Semiconductor-on-insulator field effect transistor with performance-enhancing source/drain shapes and/or materials (2023-11-07),

5. 11728380 - Bipolar transistor with base horizontally displaced from collector (2023-08-15),

6. 11588043 - Bipolar transistor with elevated extrinsic base and methods to form same (2023-02-21),

7. 11404563 - Insulated-gate bipolar transistor with enhanced frequency response, and related methods (2022-08-02),

8. 11217685 - Heterojunction bipolar transistor with marker layer (2022-01-04),

9. 11056533 - Bipolar junction transistor device with piezoelectric material positioned adjacent thereto (2021-07-06),

10. 10374090 - Replacement body FinFET for improved junction profile with gate self-aligned junctions (2019-08-06),

11. 9953873 - Methods of modulating the morphology of epitaxial semiconductor material (2018-04-24),

12. 9761720 - Replacement body FinFET for improved junction profile with gate self-aligned junctions (2017-09-12),

13. 9722045 - Buffer layer for modulating Vt across devices (2017-08-01),

14. 9673295 - Contact resistance optimization via EPI growth engineering (2017-06-06),

15. 9536989 - Field-effect transistors with source/drain regions of reduced topography (2017-01-03),

Title: The Innovative Journey of Viorel C Ontalus

Introduction: Viorel C Ontalus, a pioneering inventor based in Hartford, CT (US), has made significant contributions to the field of technology with his inventive spirit and dedication to innovation.

Latest Patents: Viorel C Ontalus holds several patents in various technological domains, showcasing his versatility and creativity in inventing cutting-edge solutions to complex problems.

Career Highlights: Throughout his illustrious career, Viorel C Ontalus has demonstrated a remarkable ability to transform ideas into tangible inventions that have the potential to revolutionize industries and improve people's lives.

Collaborations: Viorel C Ontalus has collaborated with leading research institutions, universities, and innovative companies to further develop his inventions and bring them to the market, highlighting his commitment to driving progress through teamwork and shared expertise.

Conclusion: Viorel C Ontalus stands as a beacon of innovation in Hartford, CT (US), inspiring future generations of inventors to push the boundaries of what is possible and create a better tomorrow through their groundbreaking ideas and inventions.

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