Viorel C Ontalus

This inventor holds 61 USPTO granted patents and 6 published patent applications, primarily in Bipolar Transistors (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2008-2025.

USPTO Granted Patents = 61 (Patent Applications = 6)

% Patents Active = 50.8

Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 165(Granted Patents)

Forward Citations (Not Self Cited) = 160(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Fishkill, NY (US) (2012)
Danbury, CT (US) (2008 - 2017)
Hopewell Junction, NY (US) (2011 - 2018)
Hartford, CT (US) (2022 - 2023)
Unionville, CT (US) (2017 - 2024)

Company Filing History:

42 out of 166,264

International Business Machines Corporation

Globalfoundries U.S. Inc.

patents

4. 1 out of 59

Globalfoundries U.S. 2 LLC

patents

where one patent can have more than one assignee

Years Active: 2008-2025

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Areas of Expertise:

Bipolar Transistor

Heterojunction

Field-Effect Transistor

Silicon-On-Insulator

Strain Engineering

Epitaxial Growth

Source/Drain Doping

CMOS Technology

Performance Enhancement

Short-Channel Effects

Contact Resistance

Device Fabrication

61 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12336206 - Heterojunction bipolar transistors with a cut stress liner (2025-06-17),

2. 12113070 - Transistor integration on a silicon-on-insulator substrate (2024-10-08),

3. 11916135 - Bipolar transistor (2024-02-27),

4. 11810951 - Semiconductor-on-insulator field effect transistor with performance-enhancing source/drain shapes and/or materials (2023-11-07),

5. 11728380 - Bipolar transistor with base horizontally displaced from collector (2023-08-15),

6. 11588043 - Bipolar transistor with elevated extrinsic base and methods to form same (2023-02-21),

7. 11404563 - Insulated-gate bipolar transistor with enhanced frequency response, and related methods (2022-08-02),

8. 11217685 - Heterojunction bipolar transistor with marker layer (2022-01-04),

9. 11056533 - Bipolar junction transistor device with piezoelectric material positioned adjacent thereto (2021-07-06),

10. 10374090 - Replacement body FinFET for improved junction profile with gate self-aligned junctions (2019-08-06),

11. 9953873 - Methods of modulating the morphology of epitaxial semiconductor material (2018-04-24),

12. 9761720 - Replacement body FinFET for improved junction profile with gate self-aligned junctions (2017-09-12),

13. 9722045 - Buffer layer for modulating Vt across devices (2017-08-01),

14. 9673295 - Contact resistance optimization via EPI growth engineering (2017-06-06),

15. 9536989 - Field-effect transistors with source/drain regions of reduced topography (2017-01-03),

Title: The Innovative Journey of Viorel C Ontalus

Introduction: Viorel C Ontalus, a pioneering inventor based in Hartford, CT (US), has made significant contributions to the field of technology with his inventive spirit and dedication to innovation.

Latest Patents: Viorel C Ontalus holds several patents in various technological domains, showcasing his versatility and creativity in inventing cutting-edge solutions to complex problems.

Career Highlights: Throughout his illustrious career, Viorel C Ontalus has demonstrated a remarkable ability to transform ideas into tangible inventions that have the potential to revolutionize industries and improve people's lives.

Collaborations: Viorel C Ontalus has collaborated with leading research institutions, universities, and innovative companies to further develop his inventions and bring them to the market, highlighting his commitment to driving progress through teamwork and shared expertise.

Conclusion: Viorel C Ontalus stands as a beacon of innovation in Hartford, CT (US), inspiring future generations of inventors to push the boundaries of what is possible and create a better tomorrow through their groundbreaking ideas and inventions.