The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Feb. 15, 2016
Globalfoundries Inc., Grand Cayman, KY;
Viorel Ontalus, Hopewell Junction, NY (US);
Annie Lévesque, Hopewell Junction, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Device structures and fabrication methods for a fin-type field-effect transistor. A first fin and a second fin are formed that are comprised of a semiconductor material that is single crystal. The first fin has a sidewall facing a sidewall of the second fin. A portion of a source/drain region of the first fin is damaged to form a damage region in the portion of the first fin. After the damage region is formed, a section of a semiconductor layer is epitaxially grown from the sidewall of the first fin in the source/drain region. The semiconductor material in the damage region has a level of crystalline disorder that is greater than a level of crystalline disorder of the semiconductor material in a portion of the first fin that is not damaged.