Insulated-gate bipolar transistor with enhanced frequency response, and related methods

Abstract

Embodiments of the disclosure provide an insulated-gate bipolar transistor (IGBT), including: a substrate with a first type of doping; a drift region including a first semiconductor material and a second semiconductor material having dissimilar band gaps, the drift region having a second type of doping; and a base region with the first type of doping, wherein the drift region is disposed between the substrate and the base region; wherein a stoichiometry ratio of the first and second semiconductor materials of the drift region varies as a function of distance within the drift region to provide a built-in electric field via band gap modulation. The built-in electric field reduces a band gap barrier for minority charge carriers and increases a drift velocity of the minority charge carriers in the drift region, increasing a frequency response of the IGBT.