The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jun. 24, 2021
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventor:

Viorel C. Ontalus, Hartford, CT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/732 (2006.01); H01L 29/08 (2006.01); H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 27/0823 (2013.01); H01L 29/0821 (2013.01); H01L 29/732 (2013.01);
Abstract

Aspects of the disclosure provide a bipolar transistor structure with a sub-collector on a substrate, a first collector region on a first portion of the sub-collector, a trench isolation (TI) on a second portion of the sub-collector and adjacent the first collector region, and a second collector region on a third portion of the sub-collector and adjacent the TI. A base on first collector region and a portion of the TI. An emitter is on a first portion of the base above the first collector region. The base includes a second portion horizontally displaced from the emitter in a first horizontal direction, and horizontally displaced from the second collector region in a second horizontal direction orthogonal to the first horizontal direction.


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