The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jun. 02, 2008
Yun-yu Wang, Poughquag, NY (US);
Linda Black, Wappingers Falls, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Woo-hyeong Lee, Poughquag, NY (US);
Scott Luning, Poughkeepsie, NY (US);
Christopher D. Sheraw, Poughkeepsie, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Linda Black, Wappingers Falls, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Woo-Hyeong Lee, Poughquag, NY (US);
Scott Luning, Poughkeepsie, NY (US);
Christopher D. Sheraw, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Methods are disclosed for providing stacking fault reduced epitaxially grown silicon for use in hybrid surface orientation structures. In one embodiment, a method includes depositing a silicon nitride liner over a silicon oxide liner in an opening, etching to remove the silicon oxide liner and silicon nitride liner on a lower surface of the opening, undercutting the silicon nitride liner adjacent to the lower surface, and epitaxially growing silicon in the opening. The silicon is substantially reduced of stacking faults because of the negative slope created by the undercut.