The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jan. 07, 2010
James J. Kelly, Schenectady, NY (US);
Veeraghavan S. Basker, Schenectady, NY (US);
Bala S. Haran, Elmsford, NY (US);
Soon-cheon Seo, Glenmont, NY (US);
Tuan A. Vo, Albany, NY (US);
James J. Kelly, Schenectady, NY (US);
Veeraghavan S. Basker, Schenectady, NY (US);
Bala S. Haran, Elmsford, NY (US);
Soon-Cheon Seo, Glenmont, NY (US);
Tuan A. Vo, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.