Balaji Kannan

This inventor holds 24 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Globalfoundries Inc., International Business Machines Corporation. Active years: 2016-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Balaji Kannan. Retrieved from https://idiyas.com/inventor/balaji-kannan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 (Patent Applications = 2)

% Patents Active = 79.2

Average Co-Inventor Count = 4.5

ph-index = 6

Forward Citations = 831(Granted Patents)

Location History:

Poughkeepsie, NY (US) (2016)
Fishkill, NY (US) (2016 - 2019)
Clifton Park, NY (US) (2017 - 2020)

Company Filing History:

International Business Machines Corporation

patents

Years Active: 2016-2020

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Areas of Expertise:

High-K Metal Gates

Field Effect Transistors

Threshold Voltage Devices

Replacement Metal Gates

Gate Stack Formation

Soft Mask Integration

Dopant Patterning

Titanium Nitride Deposition

Multi-Threshold Devices

Laser Annealing

N-P Proximity Effect

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10741668 - Short channel and long channel devices (2020-08-11),

2. 10727133 - Method of forming gate structure with undercut region and resulting device (2020-07-28),

3. 10658363 - Cut inside replacement metal gate trench to mitigate N-P proximity effect (2020-05-19),

4. 10446550 - Cut inside replacement metal gate trench to mitigate N-P proximity effect (2019-10-15),

5. 10395993 - Methods and structure to form high K metal gate stack with single work-function metal (2019-08-27),

6. 10332747 - Selective titanium nitride deposition using oxides of lanthanum masks (2019-06-25),

7. 10170373 - Methods for making robust replacement metal gates and multi-threshold devices in a soft mask integration scheme (2019-01-01),

8. 10062618 - Method and structure for formation of replacement metal gate field effect transistors (2018-08-28),

9. 10020202 - Fabrication of multi threshold-voltage devices (2018-07-10),

10. 9997610 - Gate stack formed with interrupted deposition processes and laser annealing (2018-06-12),

11. 9997361 - Gate stack formed with interrupted deposition processes and laser annealing (2018-06-12),

12. 9824930 - Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme (2017-11-21),

13. 9748145 - Semiconductor devices with varying threshold voltage and fabrication methods thereof (2017-08-29),

14. 9741720 - Higher 'K' gate dielectric cap for replacement metal gate (RMG) FINFET devices (2017-08-22),

15. 9721842 - Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme (2017-08-01),

Title: Balaji Kannan - Innovator from Fishkill, NY

Introduction: Balaji Kannan is a renowned inventor based in Fishkill, New York. He is known for his groundbreaking innovations in various fields.

Latest Patents: Balaji Kannan holds several patents in the areas of renewable energy, sustainable technologies, and advanced materials. His most recent patents focus on enhancing energy efficiency in industrial processes.

Career Highlights: With a background in engineering and a passion for sustainability, Balaji Kannan has had a successful career developing cutting-edge solutions. He has worked for leading companies in the renewable energy sector, contributing significantly to the industry.

Collaborations: Balaji Kannan has collaborated with top research institutions and universities to further his innovative projects. His partnerships have led to the development of eco-friendly technologies that have the potential to revolutionize the way we approach sustainability.

Conclusion: Balaji Kannan's dedication to creating sustainable solutions and his commitment to pushing the boundaries of innovation make him a standout figure in the world of inventors. His work continues to inspire and drive positive change in the industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: